Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs
The analytical, structural and electrophysical techniques have been applied to studies of the thermal degradation mechanism appearing in diode structures with the Schottky barrier Au-Mo-TiBxGaAs. It was shown that the rapid thermal annealing at T = 600 °C during 60 sec in hydrogen atmosphere results...
Збережено в:
| Дата: | 1999 |
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| Автори: | , , , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119864 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs / E.F. Venger, A.A. Beliaev, N.S. Boltovets, I.B. Ermolovich, V.N. Ivanov, R.V. Konakova, V.V. Milenin, D.I.Voitsikhovski, T. Figielski, A. Makosa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 57-61. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119864 |
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irk-123456789-1198642017-06-11T03:02:38Z Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs Venger, E.F. Beliaev, A.A. Boltovets, N.S. Ermolovich, I.B. Ivanov, V.N. Konakova, R.V. Milenin, V.V. Voitsikhovski, D.I. Figielski, T. Makosa, A. The analytical, structural and electrophysical techniques have been applied to studies of the thermal degradation mechanism appearing in diode structures with the Schottky barrier Au-Mo-TiBxGaAs. It was shown that the rapid thermal annealing at T = 600 °C during 60 sec in hydrogen atmosphere results in creating the ELS type center in the space charge region of GaAs. This center is represented by the complex VGa+VAs, which has been confirmed by photoluminescence measurements. It causes the appearance of excess current at the initial part of current-voltage characteristic. 1999 Article Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs / E.F. Venger, A.A. Beliaev, N.S. Boltovets, I.B. Ermolovich, V.N. Ivanov, R.V. Konakova, V.V. Milenin, D.I.Voitsikhovski, T. Figielski, A. Makosa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 57-61. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 73.30; 85.30.H, K http://dspace.nbuv.gov.ua/handle/123456789/119864 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The analytical, structural and electrophysical techniques have been applied to studies of the thermal degradation mechanism appearing in diode structures with the Schottky barrier Au-Mo-TiBxGaAs. It was shown that the rapid thermal annealing at T = 600 °C during 60 sec in hydrogen atmosphere results in creating the ELS type center in the space charge region of GaAs. This center is represented by the complex VGa+VAs, which has been confirmed by photoluminescence measurements. It causes the appearance of excess current at the initial part of current-voltage characteristic. |
| format |
Article |
| author |
Venger, E.F. Beliaev, A.A. Boltovets, N.S. Ermolovich, I.B. Ivanov, V.N. Konakova, R.V. Milenin, V.V. Voitsikhovski, D.I. Figielski, T. Makosa, A. |
| spellingShingle |
Venger, E.F. Beliaev, A.A. Boltovets, N.S. Ermolovich, I.B. Ivanov, V.N. Konakova, R.V. Milenin, V.V. Voitsikhovski, D.I. Figielski, T. Makosa, A. Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Venger, E.F. Beliaev, A.A. Boltovets, N.S. Ermolovich, I.B. Ivanov, V.N. Konakova, R.V. Milenin, V.V. Voitsikhovski, D.I. Figielski, T. Makosa, A. |
| author_sort |
Venger, E.F. |
| title |
Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs |
| title_short |
Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs |
| title_full |
Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs |
| title_fullStr |
Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs |
| title_full_unstemmed |
Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs |
| title_sort |
effect of rapid thermal annealing on properties of contacts au-mo-tibx-gaas |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
1999 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119864 |
| citation_txt |
Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs / E.F. Venger, A.A. Beliaev, N.S. Boltovets, I.B. Ermolovich, V.N. Ivanov, R.V. Konakova, V.V. Milenin, D.I.Voitsikhovski, T. Figielski, A. Makosa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 57-61. — Бібліогр.: 7 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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