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Properties of SiGe/Si heterostructures fabricated by ion implantation technique

Properties of SiGe/Si heterostructures fabricated by ion implantation technique

A comprehensive electrical characterisation of the SiGe/Si heterostructures has been performed in the wide temperature range (10270 K). Four structures fabricated by the Ge⁺ ion implantation technique at different substrate temperatures (room temperature, 150°C, 450°C and 600°C) have been studied. T...

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Bibliographic Details
Main Authors: Gomeniuk, Y.V., Lysenko, V.S., Osiyuk, I.N., Tyagulski, I.P., Valakh, M.Ya., Yukhimchuk, V.A., Willander, M., Patel, C.J.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/119871
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http://dspace.nbuv.gov.ua/handle/123456789/119871

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