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Properties of SiGe/Si heterostructures fabricated by ion implantation technique

Properties of SiGe/Si heterostructures fabricated by ion implantation technique

A comprehensive electrical characterisation of the SiGe/Si heterostructures has been performed in the wide temperature range (10270 K). Four structures fabricated by the Ge⁺ ion implantation technique at different substrate temperatures (room temperature, 150°C, 450°C and 600°C) have been studied. T...

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Main Authors: Gomeniuk, Y.V., Lysenko, V.S., Osiyuk, I.N., Tyagulski, I.P., Valakh, M.Ya., Yukhimchuk, V.A., Willander, M., Patel, C.J.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/119871
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spelling irk-123456789-1198712017-06-11T03:02:44Z Properties of SiGe/Si heterostructures fabricated by ion implantation technique Gomeniuk, Y.V. Lysenko, V.S. Osiyuk, I.N. Tyagulski, I.P. Valakh, M.Ya. Yukhimchuk, V.A. Willander, M. Patel, C.J. A comprehensive electrical characterisation of the SiGe/Si heterostructures has been performed in the wide temperature range (10270 K). Four structures fabricated by the Ge⁺ ion implantation technique at different substrate temperatures (room temperature, 150°C, 450°C and 600°C) have been studied. The diode I-V characteristics, thermally stimulated capacitance and currents were measured and the presence and parameters of shallow trap levels were determined in dependence on the substrate temperature. The sample implanted at 450°C shows the best diode operation reflecting the higher quality of the surface silicon layer as compared to RT- and 150°C-implanted samples. Implantation-induced mechanical stresses have been investigated by Raman spectroscopy. For the first time the cryogenic TSCR technique has been applied to this system which makes it possible to investigate strain in the silicon layer due to SiGe layer formation. 1999 Article Properties of SiGe/Si heterostructures fabricated by ion implantation technique / Y.V. Gomeniuk, V.S. Lysenko, I.N. Osiyuk, I.P. Tyagulski, M.Ya. Valakh, V.A. Yukhimchuk, M. Willander, C.J. Patel // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 74-80. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 73.20.Hb; 73.40.Lq; 78.30.-j http://dspace.nbuv.gov.ua/handle/123456789/119871 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description A comprehensive electrical characterisation of the SiGe/Si heterostructures has been performed in the wide temperature range (10270 K). Four structures fabricated by the Ge⁺ ion implantation technique at different substrate temperatures (room temperature, 150°C, 450°C and 600°C) have been studied. The diode I-V characteristics, thermally stimulated capacitance and currents were measured and the presence and parameters of shallow trap levels were determined in dependence on the substrate temperature. The sample implanted at 450°C shows the best diode operation reflecting the higher quality of the surface silicon layer as compared to RT- and 150°C-implanted samples. Implantation-induced mechanical stresses have been investigated by Raman spectroscopy. For the first time the cryogenic TSCR technique has been applied to this system which makes it possible to investigate strain in the silicon layer due to SiGe layer formation.
format Article
author Gomeniuk, Y.V.
Lysenko, V.S.
Osiyuk, I.N.
Tyagulski, I.P.
Valakh, M.Ya.
Yukhimchuk, V.A.
Willander, M.
Patel, C.J.
spellingShingle Gomeniuk, Y.V.
Lysenko, V.S.
Osiyuk, I.N.
Tyagulski, I.P.
Valakh, M.Ya.
Yukhimchuk, V.A.
Willander, M.
Patel, C.J.
Properties of SiGe/Si heterostructures fabricated by ion implantation technique
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Gomeniuk, Y.V.
Lysenko, V.S.
Osiyuk, I.N.
Tyagulski, I.P.
Valakh, M.Ya.
Yukhimchuk, V.A.
Willander, M.
Patel, C.J.
author_sort Gomeniuk, Y.V.
title Properties of SiGe/Si heterostructures fabricated by ion implantation technique
title_short Properties of SiGe/Si heterostructures fabricated by ion implantation technique
title_full Properties of SiGe/Si heterostructures fabricated by ion implantation technique
title_fullStr Properties of SiGe/Si heterostructures fabricated by ion implantation technique
title_full_unstemmed Properties of SiGe/Si heterostructures fabricated by ion implantation technique
title_sort properties of sige/si heterostructures fabricated by ion implantation technique
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 1999
url http://dspace.nbuv.gov.ua/handle/123456789/119871
citation_txt Properties of SiGe/Si heterostructures fabricated by ion implantation technique / Y.V. Gomeniuk, V.S. Lysenko, I.N. Osiyuk, I.P. Tyagulski, M.Ya. Valakh, V.A. Yukhimchuk, M. Willander, C.J. Patel // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 74-80. — Бібліогр.: 16 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT gomeniukyv propertiesofsigesiheterostructuresfabricatedbyionimplantationtechnique
AT lysenkovs propertiesofsigesiheterostructuresfabricatedbyionimplantationtechnique
AT osiyukin propertiesofsigesiheterostructuresfabricatedbyionimplantationtechnique
AT tyagulskiip propertiesofsigesiheterostructuresfabricatedbyionimplantationtechnique
AT valakhmya propertiesofsigesiheterostructuresfabricatedbyionimplantationtechnique
AT yukhimchukva propertiesofsigesiheterostructuresfabricatedbyionimplantationtechnique
AT willanderm propertiesofsigesiheterostructuresfabricatedbyionimplantationtechnique
AT patelcj propertiesofsigesiheterostructuresfabricatedbyionimplantationtechnique
first_indexed 2023-10-18T20:35:37Z
last_indexed 2023-10-18T20:35:37Z
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