Properties of SiGe/Si heterostructures fabricated by ion implantation technique
A comprehensive electrical characterisation of the SiGe/Si heterostructures has been performed in the wide temperature range (10270 K). Four structures fabricated by the Ge⁺ ion implantation technique at different substrate temperatures (room temperature, 150°C, 450°C and 600°C) have been studied. T...
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| Дата: | 1999 |
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| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119871 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Properties of SiGe/Si heterostructures fabricated by ion implantation technique / Y.V. Gomeniuk, V.S. Lysenko, I.N. Osiyuk, I.P. Tyagulski, M.Ya. Valakh, V.A. Yukhimchuk, M. Willander, C.J. Patel // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 74-80. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119871 |
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irk-123456789-1198712017-06-11T03:02:44Z Properties of SiGe/Si heterostructures fabricated by ion implantation technique Gomeniuk, Y.V. Lysenko, V.S. Osiyuk, I.N. Tyagulski, I.P. Valakh, M.Ya. Yukhimchuk, V.A. Willander, M. Patel, C.J. A comprehensive electrical characterisation of the SiGe/Si heterostructures has been performed in the wide temperature range (10270 K). Four structures fabricated by the Ge⁺ ion implantation technique at different substrate temperatures (room temperature, 150°C, 450°C and 600°C) have been studied. The diode I-V characteristics, thermally stimulated capacitance and currents were measured and the presence and parameters of shallow trap levels were determined in dependence on the substrate temperature. The sample implanted at 450°C shows the best diode operation reflecting the higher quality of the surface silicon layer as compared to RT- and 150°C-implanted samples. Implantation-induced mechanical stresses have been investigated by Raman spectroscopy. For the first time the cryogenic TSCR technique has been applied to this system which makes it possible to investigate strain in the silicon layer due to SiGe layer formation. 1999 Article Properties of SiGe/Si heterostructures fabricated by ion implantation technique / Y.V. Gomeniuk, V.S. Lysenko, I.N. Osiyuk, I.P. Tyagulski, M.Ya. Valakh, V.A. Yukhimchuk, M. Willander, C.J. Patel // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 74-80. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 73.20.Hb; 73.40.Lq; 78.30.-j http://dspace.nbuv.gov.ua/handle/123456789/119871 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
A comprehensive electrical characterisation of the SiGe/Si heterostructures has been performed in the wide temperature range (10270 K). Four structures fabricated by the Ge⁺ ion implantation technique at different substrate temperatures (room temperature, 150°C, 450°C and 600°C) have been studied. The diode I-V characteristics, thermally stimulated capacitance and currents were measured and the presence and parameters of shallow trap levels were determined in dependence on the substrate temperature. The sample implanted at 450°C shows the best diode operation reflecting the higher quality of the surface silicon layer as compared to RT- and 150°C-implanted samples. Implantation-induced mechanical stresses have been investigated by Raman spectroscopy. For the first time the cryogenic TSCR technique has been applied to this system which makes it possible to investigate strain in the silicon layer due to SiGe layer formation. |
| format |
Article |
| author |
Gomeniuk, Y.V. Lysenko, V.S. Osiyuk, I.N. Tyagulski, I.P. Valakh, M.Ya. Yukhimchuk, V.A. Willander, M. Patel, C.J. |
| spellingShingle |
Gomeniuk, Y.V. Lysenko, V.S. Osiyuk, I.N. Tyagulski, I.P. Valakh, M.Ya. Yukhimchuk, V.A. Willander, M. Patel, C.J. Properties of SiGe/Si heterostructures fabricated by ion implantation technique Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Gomeniuk, Y.V. Lysenko, V.S. Osiyuk, I.N. Tyagulski, I.P. Valakh, M.Ya. Yukhimchuk, V.A. Willander, M. Patel, C.J. |
| author_sort |
Gomeniuk, Y.V. |
| title |
Properties of SiGe/Si heterostructures fabricated by ion implantation technique |
| title_short |
Properties of SiGe/Si heterostructures fabricated by ion implantation technique |
| title_full |
Properties of SiGe/Si heterostructures fabricated by ion implantation technique |
| title_fullStr |
Properties of SiGe/Si heterostructures fabricated by ion implantation technique |
| title_full_unstemmed |
Properties of SiGe/Si heterostructures fabricated by ion implantation technique |
| title_sort |
properties of sige/si heterostructures fabricated by ion implantation technique |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
1999 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119871 |
| citation_txt |
Properties of SiGe/Si heterostructures fabricated by ion implantation technique / Y.V. Gomeniuk, V.S. Lysenko, I.N. Osiyuk, I.P. Tyagulski, M.Ya. Valakh, V.A. Yukhimchuk, M. Willander, C.J. Patel // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 74-80. — Бібліогр.: 16 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT gomeniukyv propertiesofsigesiheterostructuresfabricatedbyionimplantationtechnique AT lysenkovs propertiesofsigesiheterostructuresfabricatedbyionimplantationtechnique AT osiyukin propertiesofsigesiheterostructuresfabricatedbyionimplantationtechnique AT tyagulskiip propertiesofsigesiheterostructuresfabricatedbyionimplantationtechnique AT valakhmya propertiesofsigesiheterostructuresfabricatedbyionimplantationtechnique AT yukhimchukva propertiesofsigesiheterostructuresfabricatedbyionimplantationtechnique AT willanderm propertiesofsigesiheterostructuresfabricatedbyionimplantationtechnique AT patelcj propertiesofsigesiheterostructuresfabricatedbyionimplantationtechnique |
| first_indexed |
2023-10-18T20:35:37Z |
| last_indexed |
2023-10-18T20:35:37Z |
| _version_ |
1796150606960787456 |