Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
We propose multilayer ohmic contacts to n- and p-GaN layers, with titanium
 boride as diffusion barrier. It is shown that the optimal method of contact resistivity
 measurement is the transmission line method (TLM) with circular contact geometry. The
 Ti−Al−TiBx−Au contact me...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2010 |
| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118559 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Formation of ohmic contacts to n(p)-gan and measurement
 of their contact resistivity / M.S. Boltovets, V.M. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.V. Shynkarenko, V.M. Sheremet, Yu.N. Sveshnikov, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 337-342. — Бібліогр.: 37 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862569405039247360 |
|---|---|
| author | Boltovets, M.S. Ivanov, V.M. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Shynkarenko, V.V. Sheremet, V.M. Sveshnikov, Yu.N. Yavich, B.S. |
| author_facet | Boltovets, M.S. Ivanov, V.M. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Shynkarenko, V.V. Sheremet, V.M. Sveshnikov, Yu.N. Yavich, B.S. |
| citation_txt | Formation of ohmic contacts to n(p)-gan and measurement
 of their contact resistivity / M.S. Boltovets, V.M. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.V. Shynkarenko, V.M. Sheremet, Yu.N. Sveshnikov, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 337-342. — Бібліогр.: 37 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We propose multilayer ohmic contacts to n- and p-GaN layers, with titanium
boride as diffusion barrier. It is shown that the optimal method of contact resistivity
measurement is the transmission line method (TLM) with circular contact geometry. The
Ti−Al−TiBx−Au contact metallization to n-GaN retains its layer structure after thermal
annealing at temperatures up to 900 °C. The contact resistivity ρс is (6.69±1.67)×10⁻⁵
Ω⋅cm². For the Au−TiBx−Ni−p-GaN contact structure, the contact resistivity is
(1±0.15)×10⁻³ Ω⋅cm²
.
|
| first_indexed | 2025-11-26T01:42:45Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118559 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-26T01:42:45Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Boltovets, M.S. Ivanov, V.M. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Shynkarenko, V.V. Sheremet, V.M. Sveshnikov, Yu.N. Yavich, B.S. 2017-05-30T16:13:17Z 2017-05-30T16:13:17Z 2010 Formation of ohmic contacts to n(p)-gan and measurement
 of their contact resistivity / M.S. Boltovets, V.M. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.V. Shynkarenko, V.M. Sheremet, Yu.N. Sveshnikov, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 337-342. — Бібліогр.: 37 назв. — англ. 1560-8034 PACS 73.40.Cg, 73.40.Ns, 85.30.-z https://nasplib.isofts.kiev.ua/handle/123456789/118559 We propose multilayer ohmic contacts to n- and p-GaN layers, with titanium
 boride as diffusion barrier. It is shown that the optimal method of contact resistivity
 measurement is the transmission line method (TLM) with circular contact geometry. The
 Ti−Al−TiBx−Au contact metallization to n-GaN retains its layer structure after thermal
 annealing at temperatures up to 900 °C. The contact resistivity ρс is (6.69±1.67)×10⁻⁵
 Ω⋅cm². For the Au−TiBx−Ni−p-GaN contact structure, the contact resistivity is
 (1±0.15)×10⁻³ Ω⋅cm²
 . This work was supported by the Project No 31/4.2.3.1/33
 of the Governmental task scientific and technical program
 “Development and implementation of energy-saving light
 sources and illumination systems based on them”
 (Regulation of the Cabinet of Ministers of Ukraine
 No 632 from July 9, 2008). The development of varactor
 diodes was carried out under the INCO−COPERNICUS
 Program (Project No 977131 “MEMSWAVE”). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity Article published earlier |
| spellingShingle | Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity Boltovets, M.S. Ivanov, V.M. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Shynkarenko, V.V. Sheremet, V.M. Sveshnikov, Yu.N. Yavich, B.S. |
| title | Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity |
| title_full | Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity |
| title_fullStr | Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity |
| title_full_unstemmed | Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity |
| title_short | Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity |
| title_sort | formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118559 |
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