X-ray diffraction study of deformation state in InGaN/GaN multilayered structures

• Main Authors: Kladko, V.P., Kuchuk, A.V., Safryuk, N.V., Machulin, V.F., Belyaev, A.E., Konakova, R.V., Yavich, B.S.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Series: Semiconductor Physics Quantum Electronics & Optoelectronics
• Online Access: http://dspace.nbuv.gov.ua/handle/123456789/117701

High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa₁₋xN/GaN multilayered structures grown by the metal-organic chemical vapor deposition (MOCVD) method. Deformation conditions in the superlattice (SL) and its separate layers, degree of relaxation in the structure layers, as well as the period of the SL, thicknesses of its layers and composition of InxGa₁₋x solid solution in active area were determined. It was found that SL was grown on the relaxed buffer layer. SL layers were grown practically coherent with slight relaxation of InGaN layer (about 1.5 %). The role of dislocations in relaxation processes was established. Analysis of experimental diffraction spectra in these multilayered structures within the frameworks of ParratSperiozu was adapted for hexagonal syngony structures.