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X-ray diffraction study of deformation state in InGaN/GaN multilayered structures

X-ray diffraction study of deformation state in InGaN/GaN multilayered structures

High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa₁₋xN/GaN multilayered structures grown by the metal-organic chemical vapor deposition (MOCVD) method. Deformation conditions in the superlattice (SL) and its separate layers, degree of relaxation in the structure layers, as...

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Main Authors: Kladko, V.P., Kuchuk, A.V., Safryuk, N.V., Machulin, V.F., Belyaev, A.E., Konakova, R.V., Yavich, B.S.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/117701
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spelling irk-123456789-1177012017-05-27T03:02:55Z X-ray diffraction study of deformation state in InGaN/GaN multilayered structures Kladko, V.P. Kuchuk, A.V. Safryuk, N.V. Machulin, V.F. Belyaev, A.E. Konakova, R.V. Yavich, B.S. High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa₁₋xN/GaN multilayered structures grown by the metal-organic chemical vapor deposition (MOCVD) method. Deformation conditions in the superlattice (SL) and its separate layers, degree of relaxation in the structure layers, as well as the period of the SL, thicknesses of its layers and composition of InxGa₁₋x solid solution in active area were determined. It was found that SL was grown on the relaxed buffer layer. SL layers were grown practically coherent with slight relaxation of InGaN layer (about 1.5 %). The role of dislocations in relaxation processes was established. Analysis of experimental diffraction spectra in these multilayered structures within the frameworks of ParratSperiozu was adapted for hexagonal syngony structures. 2010 Article X-ray diffraction study of deformation state in InGaN/GaN multilayered structures / V.P. Kladko, A.V. Kuchuk, N.V. Safryuk, V.F. Machulin, A.E. Belyaev, R.V. Konakova, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 1-7. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS 61.05.cp, 64.75.Nx, 78.55.Cr, -m, 78.67.De, Hc, 81.07.St http://dspace.nbuv.gov.ua/handle/123456789/117701 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa₁₋xN/GaN multilayered structures grown by the metal-organic chemical vapor deposition (MOCVD) method. Deformation conditions in the superlattice (SL) and its separate layers, degree of relaxation in the structure layers, as well as the period of the SL, thicknesses of its layers and composition of InxGa₁₋x solid solution in active area were determined. It was found that SL was grown on the relaxed buffer layer. SL layers were grown practically coherent with slight relaxation of InGaN layer (about 1.5 %). The role of dislocations in relaxation processes was established. Analysis of experimental diffraction spectra in these multilayered structures within the frameworks of ParratSperiozu was adapted for hexagonal syngony structures.
format Article
author Kladko, V.P.
Kuchuk, A.V.
Safryuk, N.V.
Machulin, V.F.
Belyaev, A.E.
Konakova, R.V.
Yavich, B.S.
spellingShingle Kladko, V.P.
Kuchuk, A.V.
Safryuk, N.V.
Machulin, V.F.
Belyaev, A.E.
Konakova, R.V.
Yavich, B.S.
X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Kladko, V.P.
Kuchuk, A.V.
Safryuk, N.V.
Machulin, V.F.
Belyaev, A.E.
Konakova, R.V.
Yavich, B.S.
author_sort Kladko, V.P.
title X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
title_short X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
title_full X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
title_fullStr X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
title_full_unstemmed X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
title_sort x-ray diffraction study of deformation state in ingan/gan multilayered structures
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2010
url http://dspace.nbuv.gov.ua/handle/123456789/117701
citation_txt X-ray diffraction study of deformation state in InGaN/GaN multilayered structures / V.P. Kladko, A.V. Kuchuk, N.V. Safryuk, V.F. Machulin, A.E. Belyaev, R.V. Konakova, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 1-7. — Бібліогр.: 21 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT kladkovp xraydiffractionstudyofdeformationstateininganganmultilayeredstructures
AT kuchukav xraydiffractionstudyofdeformationstateininganganmultilayeredstructures
AT safryuknv xraydiffractionstudyofdeformationstateininganganmultilayeredstructures
AT machulinvf xraydiffractionstudyofdeformationstateininganganmultilayeredstructures
AT belyaevae xraydiffractionstudyofdeformationstateininganganmultilayeredstructures
AT konakovarv xraydiffractionstudyofdeformationstateininganganmultilayeredstructures
AT yavichbs xraydiffractionstudyofdeformationstateininganganmultilayeredstructures
first_indexed 2023-10-18T20:30:25Z
last_indexed 2023-10-18T20:30:25Z
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