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X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa₁₋xN/GaN multilayered structures grown by the metal-organic chemical vapor deposition (MOCVD) method. Deformation conditions in the superlattice (SL) and its separate layers, degree of relaxation in the structure layers, as...
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Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/117701 |
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