X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates

X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates

Methodical approaches to the analysis of X-ray data for GaN films grown on various buffer layers and different substrates are presented in this work. Justification of dislocation structure investigation by various methods was analyzed and approaches for evaluation of deformation level and relaxat...

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Бібліографічні деталі
Дата:2013
Автори: Safriuk, N.V., Stanchu, G.V., Kuchuk, A.V., Kladko, V.P., Belyaev, A.E., Machulin, V.F.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117727
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates / N.V. Safriuk, G.V. Stanchu, A.V. Kuchuk, V.P. Kladko, A.E. Belyaev, V.F. Machulin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 265-272. — Бібліогр.: 20 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1177272017-05-27T03:03:15Z X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates Safriuk, N.V. Stanchu, G.V. Kuchuk, A.V. Kladko, V.P. Belyaev, A.E. Machulin, V.F. Methodical approaches to the analysis of X-ray data for GaN films grown on various buffer layers and different substrates are presented in this work. Justification of dislocation structure investigation by various methods was analyzed and approaches for evaluation of deformation level and relaxation are discussed. Clarity and accuracy of obtained structure characteristics of nitride films are under discussion. Optimization methods for experimental data processing are shown. Structural properties were obtained using high resolution X-ray diffraction with two types of scans and reciprocal space maps. Microscopic nature of spatial inhomogeneities in these structures (deformations and dislocation density) and influence of the buffer layer thickness on properties of GaN layer were discussed with account of obtained results. 2013 Article X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates / N.V. Safriuk, G.V. Stanchu, A.V. Kuchuk, V.P. Kladko, A.E. Belyaev, V.F. Machulin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 265-272. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS 61.05.cp, 61.72.uj, 68.65.-k http://dspace.nbuv.gov.ua/handle/123456789/117727 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Methodical approaches to the analysis of X-ray data for GaN films grown on various buffer layers and different substrates are presented in this work. Justification of dislocation structure investigation by various methods was analyzed and approaches for evaluation of deformation level and relaxation are discussed. Clarity and accuracy of obtained structure characteristics of nitride films are under discussion. Optimization methods for experimental data processing are shown. Structural properties were obtained using high resolution X-ray diffraction with two types of scans and reciprocal space maps. Microscopic nature of spatial inhomogeneities in these structures (deformations and dislocation density) and influence of the buffer layer thickness on properties of GaN layer were discussed with account of obtained results.
format Article
author Safriuk, N.V.
Stanchu, G.V.
Kuchuk, A.V.
Kladko, V.P.
Belyaev, A.E.
Machulin, V.F.
spellingShingle Safriuk, N.V.
Stanchu, G.V.
Kuchuk, A.V.
Kladko, V.P.
Belyaev, A.E.
Machulin, V.F.
X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Safriuk, N.V.
Stanchu, G.V.
Kuchuk, A.V.
Kladko, V.P.
Belyaev, A.E.
Machulin, V.F.
author_sort Safriuk, N.V.
title X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates
title_short X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates
title_full X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates
title_fullStr X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates
title_full_unstemmed X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates
title_sort x-ray diffraction investigation of gan layers on si(111) and al₂o₃ (0001) substrates
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2013
url http://dspace.nbuv.gov.ua/handle/123456789/117727
citation_txt X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates / N.V. Safriuk, G.V. Stanchu, A.V. Kuchuk, V.P. Kladko, A.E. Belyaev, V.F. Machulin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 265-272. — Бібліогр.: 20 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT stanchugv xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates
AT kuchukav xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates
AT kladkovp xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates
AT belyaevae xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates
AT machulinvf xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates
first_indexed 2023-10-18T20:30:29Z
last_indexed 2023-10-18T20:30:29Z
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