Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts
We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n⁺-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that formation of ohmic contact occurs in the course of RTA at Т = 900°C due to f...
Збережено в:
| Дата: | 2013 |
|---|---|
| Автори: | , , , , , , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117817 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, V.P. Klad’ko, R.V. Konakova, A.V. Kuchuk, T.V. Korostinskaya, A.S. Pilipchuk, V.N. Sheremet, Yu.I. Mazur, M.E. Ware, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 313-321. — Бібліогр.: 32 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117817 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1178172017-05-27T03:04:42Z Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts Sachenko, A.V. Belyaev, A.E. Boltovets, N.S. Kapitanchuk, L.M. Klad’ko, V.P. Konakova, R.V. Kuchuk, A.V. Korostinskay, T.V. Pilipchuk, A.S. Sheremet, V.N. Mazur, Yu.I. Ware, M.E. Salamo, G.J. We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n⁺-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that formation of ohmic contact occurs in the course of RTA at Т = 900°C due to formation of titanium nitride. We studied experimentally and explained theoretically the temperature dependence of contact resistivity ρс(Т) of ohmic contacts in the 4.2-380 K temperature range. The ρс(Т) curve was shown to flatten out in the 4.2-50 K range. As temperature grew, ρс decreased exponentially. The results obtained enabled us to conclude that current flow has field nature at saturation of ρс(Т) and the thermofield nature in the exponential part of ρс(Т) curve. 2013 Article Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, V.P. Klad’ko, R.V. Konakova, A.V. Kuchuk, T.V. Korostinskaya, A.S. Pilipchuk, V.N. Sheremet, Yu.I. Mazur, M.E. Ware, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 313-321. — Бібліогр.: 32 назв. — англ. 1560-8034 PACS 73.40.Cg, 73.40.Ns, 85.40.-e http://dspace.nbuv.gov.ua/handle/123456789/117817 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
We present the results of structural and morphological investigations of
interactions between phases in the layers of Au-Pd-Ti-Pd-n⁺-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that formation of ohmic contact
occurs in the course of RTA at Т = 900°C due to formation of titanium nitride. We
studied experimentally and explained theoretically the temperature dependence of
contact resistivity ρс(Т) of ohmic contacts in the 4.2-380 K temperature range. The ρс(Т)
curve was shown to flatten out in the 4.2-50 K range. As temperature grew, ρс decreased
exponentially. The results obtained enabled us to conclude that current flow has field
nature at saturation of ρс(Т) and the thermofield nature in the exponential part of ρс(Т)
curve. |
| format |
Article |
| author |
Sachenko, A.V. Belyaev, A.E. Boltovets, N.S. Kapitanchuk, L.M. Klad’ko, V.P. Konakova, R.V. Kuchuk, A.V. Korostinskay, T.V. Pilipchuk, A.S. Sheremet, V.N. Mazur, Yu.I. Ware, M.E. Salamo, G.J. |
| spellingShingle |
Sachenko, A.V. Belyaev, A.E. Boltovets, N.S. Kapitanchuk, L.M. Klad’ko, V.P. Konakova, R.V. Kuchuk, A.V. Korostinskay, T.V. Pilipchuk, A.S. Sheremet, V.N. Mazur, Yu.I. Ware, M.E. Salamo, G.J. Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Sachenko, A.V. Belyaev, A.E. Boltovets, N.S. Kapitanchuk, L.M. Klad’ko, V.P. Konakova, R.V. Kuchuk, A.V. Korostinskay, T.V. Pilipchuk, A.S. Sheremet, V.N. Mazur, Yu.I. Ware, M.E. Salamo, G.J. |
| author_sort |
Sachenko, A.V. |
| title |
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts |
| title_short |
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts |
| title_full |
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts |
| title_fullStr |
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts |
| title_full_unstemmed |
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts |
| title_sort |
mechanism of current flow and temperature dependence of contact resistivity in au-pd-ti-pd-n⁺ -gan ohmic contacts |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2013 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117817 |
| citation_txt |
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, V.P. Klad’ko, R.V. Konakova, A.V. Kuchuk, T.V. Korostinskaya, A.S. Pilipchuk, V.N. Sheremet, Yu.I. Mazur, M.E. Ware, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 313-321. — Бібліогр.: 32 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT sachenkoav mechanismofcurrentflowandtemperaturedependenceofcontactresistivityinaupdtipdnganohmiccontacts AT belyaevae mechanismofcurrentflowandtemperaturedependenceofcontactresistivityinaupdtipdnganohmiccontacts AT boltovetsns mechanismofcurrentflowandtemperaturedependenceofcontactresistivityinaupdtipdnganohmiccontacts AT kapitanchuklm mechanismofcurrentflowandtemperaturedependenceofcontactresistivityinaupdtipdnganohmiccontacts AT kladkovp mechanismofcurrentflowandtemperaturedependenceofcontactresistivityinaupdtipdnganohmiccontacts AT konakovarv mechanismofcurrentflowandtemperaturedependenceofcontactresistivityinaupdtipdnganohmiccontacts AT kuchukav mechanismofcurrentflowandtemperaturedependenceofcontactresistivityinaupdtipdnganohmiccontacts AT korostinskaytv mechanismofcurrentflowandtemperaturedependenceofcontactresistivityinaupdtipdnganohmiccontacts AT pilipchukas mechanismofcurrentflowandtemperaturedependenceofcontactresistivityinaupdtipdnganohmiccontacts AT sheremetvn mechanismofcurrentflowandtemperaturedependenceofcontactresistivityinaupdtipdnganohmiccontacts AT mazuryui mechanismofcurrentflowandtemperaturedependenceofcontactresistivityinaupdtipdnganohmiccontacts AT wareme mechanismofcurrentflowandtemperaturedependenceofcontactresistivityinaupdtipdnganohmiccontacts AT salamogj mechanismofcurrentflowandtemperaturedependenceofcontactresistivityinaupdtipdnganohmiccontacts |
| first_indexed |
2023-10-18T20:30:42Z |
| last_indexed |
2023-10-18T20:30:42Z |
| _version_ |
1796150392768167936 |