New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis

New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis

A novel technological approach to fabrication of n-InP autoepitaxial films LPE-grown on porous n⁺-InP substrates, as well as ohmic and barrier contacts to them using (quasi)amorphous TiBx interstitial phases, is proposed. We demonstrate the advantages of TiBx−n-n⁺-n⁺⁺-InP Schottky-barrier diodes mad...

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Дата:2005
Автори: Arsentyev, I.N., Bobyl, A.V., Tarasov, I.S., Shishkov, M.V., Boltovets, N.S., Ivanov, V.N., Kamalov, A.B., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Markovskiy, E.P., Milenin, V.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121574
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis / I.N. Arsentyev, A.V. Bobyl, I.S. Tarasov, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, A.B. Kamalov, R.V. Konakova, Ya.Ya. Kudryk, O.S. Lytvyn, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 105-114. — Бібліогр.: 29 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-121574
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spelling irk-123456789-1215742017-06-15T03:03:35Z New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis Arsentyev, I.N. Bobyl, A.V. Tarasov, I.S. Shishkov, M.V. Boltovets, N.S. Ivanov, V.N. Kamalov, A.B. Konakova, R.V. Kudryk, Ya.Ya. Lytvyn, O.S. Lytvyn, P.M. Markovskiy, E.P. Milenin, V.V. A novel technological approach to fabrication of n-InP autoepitaxial films LPE-grown on porous n⁺-InP substrates, as well as ohmic and barrier contacts to them using (quasi)amorphous TiBx interstitial phases, is proposed. We demonstrate the advantages of TiBx−n-n⁺-n⁺⁺-InP Schottky-barrier diodes made on porous substrates over those made on the standard rigid substrates, as well as the possibility to make Gunn diodes (intended for the 120−150 GHz frequency range) on the InP epitaxial structures grown on porous substrates. 2005 Article New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis / I.N. Arsentyev, A.V. Bobyl, I.S. Tarasov, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, A.B. Kamalov, R.V. Konakova, Ya.Ya. Kudryk, O.S. Lytvyn, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 105-114. — Бібліогр.: 29 назв. — англ. 1560-8034 PACS 81.05.Rm http://dspace.nbuv.gov.ua/handle/123456789/121574 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description A novel technological approach to fabrication of n-InP autoepitaxial films LPE-grown on porous n⁺-InP substrates, as well as ohmic and barrier contacts to them using (quasi)amorphous TiBx interstitial phases, is proposed. We demonstrate the advantages of TiBx−n-n⁺-n⁺⁺-InP Schottky-barrier diodes made on porous substrates over those made on the standard rigid substrates, as well as the possibility to make Gunn diodes (intended for the 120−150 GHz frequency range) on the InP epitaxial structures grown on porous substrates.
format Article
author Arsentyev, I.N.
Bobyl, A.V.
Tarasov, I.S.
Shishkov, M.V.
Boltovets, N.S.
Ivanov, V.N.
Kamalov, A.B.
Konakova, R.V.
Kudryk, Ya.Ya.
Lytvyn, O.S.
Lytvyn, P.M.
Markovskiy, E.P.
Milenin, V.V.
spellingShingle Arsentyev, I.N.
Bobyl, A.V.
Tarasov, I.S.
Shishkov, M.V.
Boltovets, N.S.
Ivanov, V.N.
Kamalov, A.B.
Konakova, R.V.
Kudryk, Ya.Ya.
Lytvyn, O.S.
Lytvyn, P.M.
Markovskiy, E.P.
Milenin, V.V.
New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Arsentyev, I.N.
Bobyl, A.V.
Tarasov, I.S.
Shishkov, M.V.
Boltovets, N.S.
Ivanov, V.N.
Kamalov, A.B.
Konakova, R.V.
Kudryk, Ya.Ya.
Lytvyn, O.S.
Lytvyn, P.M.
Markovskiy, E.P.
Milenin, V.V.
author_sort Arsentyev, I.N.
title New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis
title_short New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis
title_full New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis
title_fullStr New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis
title_full_unstemmed New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis
title_sort new technological possibilities to prepare inp epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2005
url http://dspace.nbuv.gov.ua/handle/123456789/121574
citation_txt New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis / I.N. Arsentyev, A.V. Bobyl, I.S. Tarasov, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, A.B. Kamalov, R.V. Konakova, Ya.Ya. Kudryk, O.S. Lytvyn, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 105-114. — Бібліогр.: 29 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:39:34Z
last_indexed 2023-10-18T20:39:34Z
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