X-ray diffraction study of deformation state in InGaN/GaN multilayered structures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2010
• Hauptverfasser: Kladko, V.P., Kuchuk, A.V., Safryuk, N.V., Machulin, V.F., Belyaev, A.E., Konakova, R.V., Yavich, B.S.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117701
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: X-ray diffraction study of deformation state in InGaN/GaN multilayered structures / V.P. Kladko, A.V. Kuchuk, N.V. Safryuk, V.F. Machulin, A.E. Belyaev, R.V. Konakova, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 1-7. — Бібліогр.: 21 назв. — англ.

High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa₁₋xN/GaN multilayered structures grown by the metal-organic chemical vapor deposition (MOCVD) method. Deformation conditions in the superlattice (SL) and its separate layers, degree of relaxation in the structure layers, as...