X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2013
• ISSN: 1560-8034
• Hauptverfasser: Safriuk, N.V., Stanchu, G.V., Kuchuk, A.V., Kladko, V.P., Belyaev, A.E., Machulin, V.F.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117727
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates / N.V. Safriuk, G.V. Stanchu, A.V. Kuchuk, V.P. Kladko, A.E. Belyaev, V.F. Machulin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 265-272. — Бібліогр.: 20 назв. — англ.

Methodical approaches to the analysis of X-ray data for GaN films grown on
 various buffer layers and different substrates are presented in this work. Justification of
 dislocation structure investigation by various methods was analyzed and approaches for
 evaluation of deformation level and relaxation are discussed. Clarity and accuracy of
 obtained structure characteristics of nitride films are under discussion. Optimization
 methods for experimental data processing are shown. Structural properties were obtained
 using high resolution X-ray diffraction with two types of scans and
 reciprocal space maps. Microscopic nature of spatial inhomogeneities in these structures
 (deformations and dislocation density) and influence of the buffer layer thickness on
 properties of GaN layer were discussed with account of obtained results.