Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density
We studied temperature dependences of the resistivity, Pc(T) , of Pd-Ti-Pd-Au
 ohmic contacts to wide-gap semiconductors n - GaN and n - AlN with a high
 dislocation density. BothPc(T) curves have portions of exponential decrease, as well as
 those with very slight Pc(T) d...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2012 |
| Автори: | , , , , , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118725 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Investigation of resistance formation mechanisms for contacts
 to n-AlN and n-GaN with a high dislocation density / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, Yu.V. Zhilyaev, L.M. Kapitanchuk, V.P. Klad’ko, R.V. Konakova, Ya.Ya. Kudryk, A.V. Kuchuk, A.V. Naumov, V.V. Panteleev, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 351-357. — Бібліогр.: 19 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862530546487263232 |
|---|---|
| author | Sachenko, A.V. Belyaev, A.E. Boltovets, N.S. Zhilyaev, Yu.V. Kapitanchuk, L.M. Klad’ko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Kuchuk, A.V. Naumov, A.V. Panteleev, V.V. Sheremet, V.N. |
| author_facet | Sachenko, A.V. Belyaev, A.E. Boltovets, N.S. Zhilyaev, Yu.V. Kapitanchuk, L.M. Klad’ko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Kuchuk, A.V. Naumov, A.V. Panteleev, V.V. Sheremet, V.N. |
| citation_txt | Investigation of resistance formation mechanisms for contacts
 to n-AlN and n-GaN with a high dislocation density / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, Yu.V. Zhilyaev, L.M. Kapitanchuk, V.P. Klad’ko, R.V. Konakova, Ya.Ya. Kudryk, A.V. Kuchuk, A.V. Naumov, V.V. Panteleev, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 351-357. — Бібліогр.: 19 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We studied temperature dependences of the resistivity, Pc(T) , of Pd-Ti-Pd-Au
ohmic contacts to wide-gap semiconductors n - GaN and n - AlN with a high
dislocation density. BothPc(T) curves have portions of exponential decrease, as well as
those with very slight Pc(T) dependence at higher temperatures. Besides, the Au-Pd-TiPd-n-GaN
contacts have a portion of Pc(T) flattening out in the low-temperature region.
This portion appears only after rapid thermal annealing (RTA). In principle, its
appearance may be caused by preliminary heavy doping of the near-contact region with a
shallow donor impurity as well as doping in the course of contact formation owing to
RTA, if the contact-forming layer involves a material atoms of which serve as shallow
donors in III N compounds. The obtained Pc(T) dependences cannot be explained by
the existing mechanisms of current transfer. We propose other mechanisms explaining
the experimental Pc(T) curves for ohmic contacts to n - GaN and n -AlN .
|
| first_indexed | 2025-11-24T02:23:33Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118725 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T02:23:33Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sachenko, A.V. Belyaev, A.E. Boltovets, N.S. Zhilyaev, Yu.V. Kapitanchuk, L.M. Klad’ko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Kuchuk, A.V. Naumov, A.V. Panteleev, V.V. Sheremet, V.N. 2017-05-31T05:22:26Z 2017-05-31T05:22:26Z 2012 Investigation of resistance formation mechanisms for contacts
 to n-AlN and n-GaN with a high dislocation density / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, Yu.V. Zhilyaev, L.M. Kapitanchuk, V.P. Klad’ko, R.V. Konakova, Ya.Ya. Kudryk, A.V. Kuchuk, A.V. Naumov, V.V. Panteleev, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 351-357. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS 73.40.Cg, 73.40.Ns, 85.40.-e https://nasplib.isofts.kiev.ua/handle/123456789/118725 We studied temperature dependences of the resistivity, Pc(T) , of Pd-Ti-Pd-Au
 ohmic contacts to wide-gap semiconductors n - GaN and n - AlN with a high
 dislocation density. BothPc(T) curves have portions of exponential decrease, as well as
 those with very slight Pc(T) dependence at higher temperatures. Besides, the Au-Pd-TiPd-n-GaN
 contacts have a portion of Pc(T) flattening out in the low-temperature region.
 This portion appears only after rapid thermal annealing (RTA). In principle, its
 appearance may be caused by preliminary heavy doping of the near-contact region with a
 shallow donor impurity as well as doping in the course of contact formation owing to
 RTA, if the contact-forming layer involves a material atoms of which serve as shallow
 donors in III N compounds. The obtained Pc(T) dependences cannot be explained by
 the existing mechanisms of current transfer. We propose other mechanisms explaining
 the experimental Pc(T) curves for ohmic contacts to n - GaN and n -AlN . This work was supported by the State Target Scientific
 and Technical Program of Ukraine “Nanotechnologies
 and nanomaterials” for 2010-2014. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density Article published earlier |
| spellingShingle | Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density Sachenko, A.V. Belyaev, A.E. Boltovets, N.S. Zhilyaev, Yu.V. Kapitanchuk, L.M. Klad’ko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Kuchuk, A.V. Naumov, A.V. Panteleev, V.V. Sheremet, V.N. |
| title | Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density |
| title_full | Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density |
| title_fullStr | Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density |
| title_full_unstemmed | Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density |
| title_short | Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density |
| title_sort | investigation of resistance formation mechanisms for contacts to n-aln and n-gan with a high dislocation density |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118725 |
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