Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures
We investigated thermal stability of Au–TiBx (ZrBx) barrier contacts, as well
 as ohmic contacts with a TiBx diffusion barrier to n-Si (GaAs, InP, GaP, GaN, SiC). The
 electrophysical measurements of Schottky barrier diodes and ohmic contacts were
 performed both before and a...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2008 |
| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118902 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures / A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 209-216. — Бібліогр.: 39 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862548547094708224 |
|---|---|
| author | Belyaev, A.E. Boltovets, N.S. Ivanov, V.N. Kladko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Sheremet, V.N. |
| author_facet | Belyaev, A.E. Boltovets, N.S. Ivanov, V.N. Kladko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Sheremet, V.N. |
| citation_txt | Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures / A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 209-216. — Бібліогр.: 39 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We investigated thermal stability of Au–TiBx (ZrBx) barrier contacts, as well
as ohmic contacts with a TiBx diffusion barrier to n-Si (GaAs, InP, GaP, GaN, SiC). The
electrophysical measurements of Schottky barrier diodes and ohmic contacts were
performed both before and after rapid thermal annealing (RTA) up to 600 °С for the
structures on Si, GaAs, InP and GaP, as well as up to higher temperatures for GaN
(~900 °C) and SiC (~1000 °C). The concentration depth profiles of contact components
were taken using Auger electron spectrometry, while phase composition and surface
morphology of the metallization layers on test structures were determined using x-ray
diffraction and atomic force microscopy. It was shown that the silicon, indium
phosphide, gallium phosphide and gallium arsenide contact structures retained their
properties and layer structure after RTA up to 600 °С. Contact degradation occurred at a
temperature of 800 °С. The structures based on SiC (GaN) remained stable at temperatures
up to 1000 °С (900 °С).
|
| first_indexed | 2025-11-25T20:29:45Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118902 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T20:29:45Z |
| publishDate | 2008 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Belyaev, A.E. Boltovets, N.S. Ivanov, V.N. Kladko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Sheremet, V.N. 2017-06-01T04:37:21Z 2017-06-01T04:37:21Z 2008 Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures / A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 209-216. — Бібліогр.: 39 назв. — англ. 1560-8034 PACS 73.23.+y, 73.40.Sx, 73.40.Gk https://nasplib.isofts.kiev.ua/handle/123456789/118902 We investigated thermal stability of Au–TiBx (ZrBx) barrier contacts, as well
 as ohmic contacts with a TiBx diffusion barrier to n-Si (GaAs, InP, GaP, GaN, SiC). The
 electrophysical measurements of Schottky barrier diodes and ohmic contacts were
 performed both before and after rapid thermal annealing (RTA) up to 600 °С for the
 structures on Si, GaAs, InP and GaP, as well as up to higher temperatures for GaN
 (~900 °C) and SiC (~1000 °C). The concentration depth profiles of contact components
 were taken using Auger electron spectrometry, while phase composition and surface
 morphology of the metallization layers on test structures were determined using x-ray
 diffraction and atomic force microscopy. It was shown that the silicon, indium
 phosphide, gallium phosphide and gallium arsenide contact structures retained their
 properties and layer structure after RTA up to 600 °С. Contact degradation occurred at a
 temperature of 800 °С. The structures based on SiC (GaN) remained stable at temperatures
 up to 1000 °С (900 °С). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures Article published earlier |
| spellingShingle | Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures Belyaev, A.E. Boltovets, N.S. Ivanov, V.N. Kladko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Sheremet, V.N. |
| title | Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures |
| title_full | Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures |
| title_fullStr | Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures |
| title_full_unstemmed | Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures |
| title_short | Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures |
| title_sort | heat-resistant barrier and ohmic contacts based on tibx and zrbx interstitial phases to microwave diode structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118902 |
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