SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers

Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier heights in the formed contacts was explained by the thermal stability of an inter...

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Бібліографічні деталі
Дата:2004
Автори: Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118115
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers / N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, O.S. Lytvyn, P.M. Lytvyn, S.I. Vlaskina, O.A. Agueev, A.I. Svetlichny, S.I. Soloviev, T.S. Sudarshan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 60-62. — Бібліогр.: 8 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118115
record_format dspace
spelling irk-123456789-1181152017-05-29T03:04:54Z SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers Boltovets, N.S. Ivanov, V.N. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Lytvyn, O.S. Lytvyn, P.M. Vlaskina, S.I. Agueev, O.A. Svetlichny, A.I. Soloviev, S.I. Sudarshan, T.S. Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier heights in the formed contacts was explained by the thermal stability of an interface TiBx(ZrBx)-SiC after rapid thermal annealing at 800°N for 60 s. 2004 Article SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers / N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, O.S. Lytvyn, P.M. Lytvyn, S.I. Vlaskina, O.A. Agueev, A.I. Svetlichny, S.I. Soloviev, T.S. Sudarshan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 60-62. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 85.30.Kk http://dspace.nbuv.gov.ua/handle/123456789/118115 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier heights in the formed contacts was explained by the thermal stability of an interface TiBx(ZrBx)-SiC after rapid thermal annealing at 800°N for 60 s.
format Article
author Boltovets, N.S.
Ivanov, V.N.
Konakova, R.V.
Kudryk, Ya.Ya.
Milenin, V.V.
Lytvyn, O.S.
Lytvyn, P.M.
Vlaskina, S.I.
Agueev, O.A.
Svetlichny, A.I.
Soloviev, S.I.
Sudarshan, T.S.
spellingShingle Boltovets, N.S.
Ivanov, V.N.
Konakova, R.V.
Kudryk, Ya.Ya.
Milenin, V.V.
Lytvyn, O.S.
Lytvyn, P.M.
Vlaskina, S.I.
Agueev, O.A.
Svetlichny, A.I.
Soloviev, S.I.
Sudarshan, T.S.
SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Boltovets, N.S.
Ivanov, V.N.
Konakova, R.V.
Kudryk, Ya.Ya.
Milenin, V.V.
Lytvyn, O.S.
Lytvyn, P.M.
Vlaskina, S.I.
Agueev, O.A.
Svetlichny, A.I.
Soloviev, S.I.
Sudarshan, T.S.
author_sort Boltovets, N.S.
title SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
title_short SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
title_full SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
title_fullStr SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
title_full_unstemmed SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
title_sort sic schottky-barrier diodes formed with tibx and zrbx amorphous layers
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2004
url http://dspace.nbuv.gov.ua/handle/123456789/118115
citation_txt SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers / N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, O.S. Lytvyn, P.M. Lytvyn, S.I. Vlaskina, O.A. Agueev, A.I. Svetlichny, S.I. Soloviev, T.S. Sudarshan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 60-62. — Бібліогр.: 8 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:31:22Z
last_indexed 2023-10-18T20:31:22Z
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