Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals

Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals

We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route is proposed to produce microdiodes with bulk contacts. Tests of these silicon an...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2000
Автори: Boltovets, N.S., Basanets, V.V., Ivanov, V.N., Krivutsa, V.A., Tsvir, A.V., Belyaev, A.E., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A., Venger, E.F., Voitsikhovskyi, D.I., Kholevchuk, V.V., Mitin, V.F.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121166
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals / N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa, A.V.Tsvir, A.E. Belyaev, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev, E.F. Venger, D.I. Voitsikhovskyi, V.V. Kholevchuk, V.F. Mitin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 359-370. — Бібліогр.: 8 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-121166
record_format dspace
spelling irk-123456789-1211662017-06-14T03:06:11Z Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals Boltovets, N.S. Basanets, V.V. Ivanov, V.N. Krivutsa, V.A. Tsvir, A.V. Belyaev, A.E. Konakova, R.V. Lyapin, V.G. Milenin, V.V. Soloviev, E.A. Venger, E.F. Voitsikhovskyi, D.I. Kholevchuk, V.V. Mitin, V.F. We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route is proposed to produce microdiodes with bulk contacts. Tests of these silicon and gallium arsenide microwave diodes in forced modes demonstrated their high heat stability. 2000 Article Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals / N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa, A.V.Tsvir, A.E. Belyaev, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev, E.F. Venger, D.I. Voitsikhovskyi, V.V. Kholevchuk, V.F. Mitin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 359-370. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 07.07.D, 81.05.J, 85.30.K http://dspace.nbuv.gov.ua/handle/123456789/121166 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route is proposed to produce microdiodes with bulk contacts. Tests of these silicon and gallium arsenide microwave diodes in forced modes demonstrated their high heat stability.
format Article
author Boltovets, N.S.
Basanets, V.V.
Ivanov, V.N.
Krivutsa, V.A.
Tsvir, A.V.
Belyaev, A.E.
Konakova, R.V.
Lyapin, V.G.
Milenin, V.V.
Soloviev, E.A.
Venger, E.F.
Voitsikhovskyi, D.I.
Kholevchuk, V.V.
Mitin, V.F.
spellingShingle Boltovets, N.S.
Basanets, V.V.
Ivanov, V.N.
Krivutsa, V.A.
Tsvir, A.V.
Belyaev, A.E.
Konakova, R.V.
Lyapin, V.G.
Milenin, V.V.
Soloviev, E.A.
Venger, E.F.
Voitsikhovskyi, D.I.
Kholevchuk, V.V.
Mitin, V.F.
Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Boltovets, N.S.
Basanets, V.V.
Ivanov, V.N.
Krivutsa, V.A.
Tsvir, A.V.
Belyaev, A.E.
Konakova, R.V.
Lyapin, V.G.
Milenin, V.V.
Soloviev, E.A.
Venger, E.F.
Voitsikhovskyi, D.I.
Kholevchuk, V.V.
Mitin, V.F.
author_sort Boltovets, N.S.
title Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals
title_short Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals
title_full Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals
title_fullStr Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals
title_full_unstemmed Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals
title_sort microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2000
url http://dspace.nbuv.gov.ua/handle/123456789/121166
citation_txt Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals / N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa, A.V.Tsvir, A.E. Belyaev, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev, E.F. Venger, D.I. Voitsikhovskyi, V.V. Kholevchuk, V.F. Mitin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 359-370. — Бібліогр.: 8 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT boltovetsns microwavediodeswithcontactmetallizationsystemsbasedonsilicidesnitridesandboridesofrefractorymetals
AT basanetsvv microwavediodeswithcontactmetallizationsystemsbasedonsilicidesnitridesandboridesofrefractorymetals
AT ivanovvn microwavediodeswithcontactmetallizationsystemsbasedonsilicidesnitridesandboridesofrefractorymetals
AT krivutsava microwavediodeswithcontactmetallizationsystemsbasedonsilicidesnitridesandboridesofrefractorymetals
AT tsvirav microwavediodeswithcontactmetallizationsystemsbasedonsilicidesnitridesandboridesofrefractorymetals
AT belyaevae microwavediodeswithcontactmetallizationsystemsbasedonsilicidesnitridesandboridesofrefractorymetals
AT konakovarv microwavediodeswithcontactmetallizationsystemsbasedonsilicidesnitridesandboridesofrefractorymetals
AT lyapinvg microwavediodeswithcontactmetallizationsystemsbasedonsilicidesnitridesandboridesofrefractorymetals
AT mileninvv microwavediodeswithcontactmetallizationsystemsbasedonsilicidesnitridesandboridesofrefractorymetals
AT solovievea microwavediodeswithcontactmetallizationsystemsbasedonsilicidesnitridesandboridesofrefractorymetals
AT vengeref microwavediodeswithcontactmetallizationsystemsbasedonsilicidesnitridesandboridesofrefractorymetals
AT voitsikhovskyidi microwavediodeswithcontactmetallizationsystemsbasedonsilicidesnitridesandboridesofrefractorymetals
AT kholevchukvv microwavediodeswithcontactmetallizationsystemsbasedonsilicidesnitridesandboridesofrefractorymetals
AT mitinvf microwavediodeswithcontactmetallizationsystemsbasedonsilicidesnitridesandboridesofrefractorymetals
first_indexed 2023-10-18T20:38:47Z
last_indexed 2023-10-18T20:38:47Z
_version_ 1796150744651399168

Схожі ресурси