Харвестер відкритої науки НАН України

Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization

за авторством Naumov, A.V., Kolomys, O.F., Romanyuk, A.S., Tsykaniuk, B.I., Strelchuk, V.V., Trius, M.P., Avksentyev, A.Yu., Belyaev, A.E.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions

за авторством Belyaev, A.E., Foxon, C.T., Novikov, S.V., Makarovsky, O., Eaves, L., Kappers, M.J., Barnard, J.S., Humphreys, C.J., Danylyuk, S.V., Vitusevich, S.A., Naumov, A.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density

за авторством Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Zhilyaev, Yu.V., Kapitanchuk, L.M., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Naumov, A.V., Panteleev, V.V., Sheremet, V.N.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2012)