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Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures by Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

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Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review) by Sachenko, A.V., Konakova, R.V., Belyaev, A.Ye.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2018)

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Comparative characteristics of TiO₂(Er₂O₃, Dy₂O₃)/por-SiC/SiC heterostructures (Review) by Bacherikov, Yu.Yu., Konakova, R.V., Okhrimenko, O.B.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2020)

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Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices by Ivanov, V.N., Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

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A universal automated complex for control and diagnostics of semiconductor devices and structures by Konakova, R.V., Rengevych, O.E., Kurakin, A.M., Kudryk, Ya.Ya.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

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Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals by Konakova, R.V., Red’ko, S.M., Milenin, V.V., Red’ko, R.A.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

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Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features by Dmitruk, N.L., Karimov, A.V., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

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Радиационная технология улучшения омических контактов к элементам электронной техники by Konakova, R. V., Kolyadina, Е. Yu., Matveeva, L. А., Nelyuba, P. L., Shynkarenko, V. V.

Published 2010

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Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes by Romanets, P.M., Konakova, R.V., Boltovets, M.S., Basanets, V.V., Kudryk, Ya.Ya., Slipokurov, V.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2019)

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Influence of pulse magnetic fields treatment on optical properties of GaAs based films by Konakova, R.V., Sosnova, M.V., Red’ko, S.M., Milenin, V.V., Red’ko, R.A.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

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Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts by Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V., Sheremet, V.N.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

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The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment by Kolyadina, E.Yu., Konakova, R.V., Matveeva, L.A., Mitin, V.F., Shynkarenko, V.V., Atanassova, E.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2008)

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Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines by Boltovets, N.S., Kashin, G.N., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

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Optically controlled 2D tunnelling in GaAs delta-doped p-n junction by Vitusevich, S. A., Forster, A., Belyaev, A. E., Glavin, B. A., Indlekofer, K. M., Luth, H., Konakova, R. V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

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Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films by Bacherikov, Yu.Yu., Boltovets, N.S., Konakova, R.V., Kolyadina, E.Yu., Ledn’ova, T.M., Okhrimenko, O.B.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2012)

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Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures by Bacherikov, Yu.Yu., Konakova, R.V., Kolyadina, E.Yu., Kocherov, A.N., Okhrimenko, O.B., Svetlichnyi, A.M.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

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Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures by Bacherikov, Yu.Yu., Konakova, R.V., Okhrimenko, O.B., Berezovska, N.I., Kapitanchuk, L.M., Svetlichnyi, A.M.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2017)

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Оптичнi властивостi епiтаксiйних плiвок GaN, що перебували пiд дiєю мiкрохвильового опромiнення by Belyaev, A. E., Klyui, N. I., Konakova, R. V., Luk’yanov, A. M., Sveshnikov, Yu. M., Klyui, A. M.

Published 2018

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X-ray diffraction study of deformation state in InGaN/GaN multilayered structures by Kladko, V.P., Kuchuk, A.V., Safryuk, N.V., Machulin, V.F., Belyaev, A.E., Konakova, R.V., Yavich, B.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

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Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes by Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sorokin, V.M., Sheremet, V.N., Shynkarenko, V.V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

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Search Results - Konakova, R.V.

Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures by Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.

Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review) by Sachenko, A.V., Konakova, R.V., Belyaev, A.Ye.

Comparative characteristics of TiO₂(Er₂O₃, Dy₂O₃)/por-SiC/SiC heterostructures (Review) by Bacherikov, Yu.Yu., Konakova, R.V., Okhrimenko, O.B.

Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices by Ivanov, V.N., Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.

A universal automated complex for control and diagnostics of semiconductor devices and structures by Konakova, R.V., Rengevych, O.E., Kurakin, A.M., Kudryk, Ya.Ya.

Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals by Konakova, R.V., Red’ko, S.M., Milenin, V.V., Red’ko, R.A.

Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features by Dmitruk, N.L., Karimov, A.V., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V.

Радиационная технология улучшения омических контактов к элементам электронной техники by Konakova, R. V., Kolyadina, Е. Yu., Matveeva, L. А., Nelyuba, P. L., Shynkarenko, V. V.

Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes by Romanets, P.M., Konakova, R.V., Boltovets, M.S., Basanets, V.V., Kudryk, Ya.Ya., Slipokurov, V.S.

Influence of pulse magnetic fields treatment on optical properties of GaAs based films by Konakova, R.V., Sosnova, M.V., Red’ko, S.M., Milenin, V.V., Red’ko, R.A.

Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts by Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V., Sheremet, V.N.

The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment by Kolyadina, E.Yu., Konakova, R.V., Matveeva, L.A., Mitin, V.F., Shynkarenko, V.V., Atanassova, E.

Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines by Boltovets, N.S., Kashin, G.N., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A.

Optically controlled 2D tunnelling in GaAs delta-doped p-n junction by Vitusevich, S. A., Forster, A., Belyaev, A. E., Glavin, B. A., Indlekofer, K. M., Luth, H., Konakova, R. V.

Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films by Bacherikov, Yu.Yu., Boltovets, N.S., Konakova, R.V., Kolyadina, E.Yu., Ledn’ova, T.M., Okhrimenko, O.B.

Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures by Bacherikov, Yu.Yu., Konakova, R.V., Kolyadina, E.Yu., Kocherov, A.N., Okhrimenko, O.B., Svetlichnyi, A.M.

Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures by Bacherikov, Yu.Yu., Konakova, R.V., Okhrimenko, O.B., Berezovska, N.I., Kapitanchuk, L.M., Svetlichnyi, A.M.

Оптичнi властивостi епiтаксiйних плiвок GaN, що перебували пiд дiєю мiкрохвильового опромiнення by Belyaev, A. E., Klyui, N. I., Konakova, R. V., Luk’yanov, A. M., Sveshnikov, Yu. M., Klyui, A. M.

X-ray diffraction study of deformation state in InGaN/GaN multilayered structures by Kladko, V.P., Kuchuk, A.V., Safryuk, N.V., Machulin, V.F., Belyaev, A.E., Konakova, R.V., Yavich, B.S.

Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes by Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sorokin, V.M., Sheremet, V.N., Shynkarenko, V.V.

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