Development of high-stable contact systems to gallium nitride microwave diodes

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2007
• Автори: Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kapitanchuk, L.M., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Sheremet, V.N., Sveshnikov, Yu.N.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118341
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Development of high-stable contact systems to gallium nitride microwave diodes / A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, L.M. Kapitanchuk, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, V.N. Sheremet, Yu.N. Sveshnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 1-8. — Бібліогр.: 20 назв. — англ.

High-stable heat-resistant low-resistance contact systems with diffusion
 barriers involving quasi-amorphous TiBx layers are suggested and studied. We have
 performed the structural and morphological investigations along with studies of Auger
 concentration depth profiles in the contacts both before and after rapid thermal annealing.
 It is found that the Au−TiBx−Al−Ti−GaN contact layers with diffusion barriers retain
 both a layered structure of the contact metallization and the value of contact resistivity
 practically unchanged up to the temperature Т ≈ 700 ºС. At the same time, the layered
 structure of the metallization in standard Au−Ti−Al−Ti−GaN contact systems breaks
 down at such rapid thermal annealing. It is shown that the contact metallization of both
 types demonstrates the tunnel current flow mechanism in the temperature range
 225−335 K, whereas the current flow mechanism is thermionic in the range 335−380 K,
 the Schottky barrier height being ~0.16 eV. For the best samples under consideration, the contact resistivity was no more than 10⁻⁶ Ohm∙cm²
 .