Optical and acoustical phonon modes in superlattices with SiGe QDs

за авторством Yukhymchuk, V.O., Dzhagan, V.M., Klad’ko, V.P., Lytvyn, O.S., Machulin, V.F., Valakh, M.Ya., Yaremko, A.M., Milekhin, A.G., Krasil’nik, Z.F., Novikov, A.V., Mestres, N., Pascual, J.
Опубліковано 2004

Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass

за авторством Mateleshko, N., Mitsa, V., Stronski, A., Veres, M., Koos, M., Andriesh, A.M.
Опубліковано 2004

Tunable high-finesse narrow bandpass Fabry – Perot filter

за авторством Markov, V.B., Khizhnyak, A.I., Goren, V., Cook, W.B.
Опубліковано 2004

Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors

за авторством Baranskii, P.I., Babich, V.M., Venger, E.F.
Опубліковано 2001

Crystallochemistry of defects in lead telluride films

за авторством Freik, D.M., Ruvinskii, M.A., Ruvinskii, B.M., Galushchak, M.A.
Опубліковано 2001

Effect of surface condition on strain in semiconductor crystal sample

за авторством Serdega, B.K., Nikitenko, E.V., Prikhodenko, V.I.
Опубліковано 2001

Electronic properties of silicon surface at different oxide film conditions

за авторством Kirillova, S.I., Primachenko, V.E., Venger, E.F., Chernobai, V.A.
Опубліковано 2001

Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films

за авторством Nesterenko, B.O., Kazantseva, Z.I., Stadnyk, O.A., De Rossi, D., Kalchenko, V.I.
Опубліковано 2001

Difference harmonic generation due to spin-flip transitions in an asymmetric quantum well

за авторством Korovin, A.V.
Опубліковано 2001

Electrical properties of macroporous silicon structures

за авторством Karachevtseva, L.A., Lytvynenko, O.A., Malovichko, E.A., Sobolev, V.D., Stronska, O.J.
Опубліковано 2001

Activation of porous Si blue emission due to preanodization ion implantation

за авторством Rozhin, A.G., Klyui, N.I., Litovchenko, V.G., Melnik, V.P., Romanyuk, B.N., Piryatinskii, Yu.P.
Опубліковано 2001

Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes

за авторством Vlasenko, N.A., Kononets, Ya.F., Denisova, Z.L., Kopytko, Yu.V., Veligura, L.I., Soininen, El., Tornqvist, R.O., Vasama, K.M.
Опубліковано 2001

Optical biosensors based on the surface plasmon resonance phenomenon: optimization of the metal layer parameters

за авторством Snopok, B.A., Kostyukevich, K.V., Lysenko, S.I., Lytvyn, P.M., Lytvyn, O.S., Mamykin, S.V., Zynyo, S.A., Shepelyavyj, P.E., Kostyukevich, S.A., Shirshov, Yu.M., Venger, E.F.
Опубліковано 2001

Using non-organic resist based on As-S-Se chalcogenide glasses for combined optical/digital security devices

за авторством Kostyukevych, S.A., Moskalenko, N.L., Shepeliavyi, P.E., Girnyk, V.I., Tverdokhleb, I.V., Ivanovsky, A.A.
Опубліковано 2001

Structural investigations of annealed ZnS:Cu, Ga film phosphors

за авторством Lytvyn, O.S., Khomchenko, V.S., Kryshtab, T.G., Lytvyn, P.M., Mazin, M.O., Prokopenko, I.V., Rodionov, V.Ye., Tzyrkunov, Yu.A.
Опубліковано 2001

Features of electrical charge transfer in porous silicon

за авторством Monastyrskii, L.S.
Опубліковано 2001

Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs

за авторством Lysenko, V.S., Tyagulski, I.P., Gomeniuk, Y.V., Osiyuk, I.N.
Опубліковано 2001

Increase of planar homogeneity of multi-silicon structures by gettering treatments

за авторством Litovchenko, V.G., Efremov, A.A., Evtukh, A.A., Rassamakin, Yu.V., Klyui, M.I., Kostylov, V.P.
Опубліковано 2001

Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide

за авторством Litovchenko, P.G., Wahl, W., Groza, A.A., Dolgolenko, A.P., Karpenko, A.Ya., Khivrych, V.I., Litovchenko, O.P., Lastovetsky, V.F., Sugakov1, V.I., Dubovy, V.K.
Опубліковано 2001

Short-wave photodetectors based on fine grain-sized poly-Si films

за авторством Agaev, F.G.
Опубліковано 2001