Харвестер відкритої науки НАН України

Formation of Nanostructured Relief of TiN—Fe Heterostructures in Hybrid Helicon-Arc Plasma Reactor

за авторством Rudenko, E.M., Korotash, I.V., Polotskiy, D.Y., Osipov, L.S., Dyakin, M.V., Prikhna, T.A., Shapovalov, A.P.
Опубліковано в: Металлофизика и новейшие технологии (2015)

Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes

за авторством Belogolovskii, M.A., Revenko, Yu.F., Gerasimenko, A.Yu., Svistunov, V.M., Hatta, E., Plitnik, G., Shaternik, V.E., Rudenko, E.M.
Опубліковано в: Физика низких температур (2002)

Сontrolling parameters determining technological properties of a helicon discharge system

за авторством Semenyuk, V.F., Virko, V.F., Korotash, I.V., Osipov, L.S., Polotsky, D.Yu., Rudenko, E.M., Slobodyan, V.M., Shamrai, K.P.
Опубліковано в: Вопросы атомной науки и техники (2013)

Nitriding in a helicon discharge as a promising technique for changing the surface properties of steel parts

за авторством Rudenko, E.M., Panarin, V.Ye., Kyrychok, P.O., Svavilnyi, M.Ye., Korotash, I.V., Palyukh, O.O., Polotskyi, D.Yu., Trishchuk, R.L.
Опубліковано в: Успехи физики металлов (2019)

Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique

за авторством Shapovalov, A.P., Korotash, I.V., Rudenko, E.M., Sizov, F.F., Dubyna, D.S., Osipov, L.S., Polotskiy, D.Yu., Tsybrii, Z.F., Korchovyi, A.A.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique

за авторством Shapovalov, A.P., Korotash, I.V., Rudenko, E.M., Sizov, F.F., Dubyna, D.S., Osipov, L.S., Polotskiy, D.Yu., Tsybri, Z.F., Korchovyi, A.A.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis

за авторством Belyaev, A.E., Bobyl, A.V., Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Konnikov, S.G., Kudryk, Ya.Ya., Markovskiy, E.P., Milenin, V.V., Rudenko, E.M., Tereschenko, G.F., Ulin, V.P., Ustinov, V.M., Tsirlin, G.E., Shpak, A.P.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2005)